The HUFA75329G3 is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 55V and a continuous drain current of 49A. It features a drain to source resistance of 24mR and a power dissipation of 128W. The device is packaged in a TO-247 case and is rated for operation between -55°C and 175°C. It is not RoHS compliant.
PackageTO-247
Resistance0.024R
PolarityN-CHANNEL
Power128W
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Technical Specifications
Onsemi HUFA75329G3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 49A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 24mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 128W |
| Resistance | 0.024R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 33ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi HUFA75329G3 Datasheet
Download the complete datasheet for Onsemi HUFA75329G3 to view detailed technical specifications.
No datasheet is available for this part.