
The HUFA75339S3S is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 75A and a maximum power dissipation of 200W. The device is packaged in a TO-263-3 surface mount package and is lead free and RoHS compliant. The MOSFET has a drain to source breakdown voltage of 55V and a gate to source voltage of 20V.
Onsemi HUFA75339S3S technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 55V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUFA75339S3S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
