
N-Channel UltraFET® Power MOSFET, TO-262 package. Features 55V drain-source breakdown voltage, 75A continuous drain current, and 8mΩ drain-source resistance. Operates with a 20V gate-source voltage, offering a maximum power dissipation of 285W. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 57ns. Suitable for through-hole mounting and rated for operation between -55°C and 175°C.
Onsemi HUFA75344S3 technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 285W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 285W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Series | UltraFET™ |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 55V |
| Weight | 2.084g |
| RoHS | Not CompliantNo |
Download the complete datasheet for Onsemi HUFA75344S3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
