N-Channel UltraFET Power MOSFET featuring 100V drain-source breakdown voltage and 75A continuous drain current. This surface mount device offers a low 14mΩ drain-source resistance and 310W maximum power dissipation. Operating from -55°C to 175°C, it includes fast switching characteristics with a 14ns turn-on delay and 97ns fall time. Packaged in TO-263-3 on an 800-piece tape and reel, this RoHS compliant component is lead-free.
Onsemi HUFA75645S3S technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 97ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.79nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 100V |
| Weight | 1.31247g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUFA75645S3S to view detailed technical specifications.
No datasheet is available for this part.
