
N-channel MOSFET, 150V drain-source breakdown voltage, 75A continuous drain current. Features 16mΩ maximum drain-source on-resistance and 500W maximum power dissipation. Operates from -55°C to 175°C, housed in a TO-247-3 package for through-hole mounting. Includes 107ns fall time and 82ns turn-off delay time. RoHS compliant and lead-free.
Onsemi HUFA75852G3 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 75A |
| Current | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 107ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.69nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 150 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 82ns |
| Voltage | 150V |
| DC Rated Voltage | 150V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUFA75852G3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
