N-channel MOSFET for surface mount applications, featuring a 60V drain-source breakdown voltage and a continuous drain current of 12A. This component offers a low on-resistance of 77mR at a 10V gate-source voltage, with a maximum power dissipation of 38W. It operates across a wide temperature range from -55°C to 175°C and is packaged in a TO-252AA (DPAK) case. RoHS compliant and lead-free, this MOSFET is supplied on tape and reel.
PackageTO-252AA
Current Rating11A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUFA76407D3ST technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Rds On Max | 92mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 43ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA76407D3ST Datasheet
Download the complete datasheet for Onsemi HUFA76407D3ST to view detailed technical specifications.
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