
N-Channel Logic Level Power MOSFET with 60V drain-source breakdown voltage and 17A continuous drain current. Features low on-resistance of 52mΩ (typical) and 63mΩ (max), with a maximum power dissipation of 49W. Designed for surface mounting in a TO-252-3 package, this component offers fast switching speeds with turn-on delay of 5.3ns and fall time of 50ns. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
Onsemi HUFA76409D3ST technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 52mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 485pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 49W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 49W |
| Rds On Max | 63mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 5.3ns |
| DC Rated Voltage | 60V |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi HUFA76409D3ST to view detailed technical specifications.
No datasheet is available for this part.