60V, 5.1A N-Channel MOSFET in SOIC package. Features low Rds(on) of 49mR at 10V Vgs, 620pF input capacitance, and 2.5W power dissipation. Operates from -55°C to 150°C, with 27ns fall time and 45ns turn-off delay. Surface mountable, lead-free, and RoHS compliant.
PackageSOIC
Current Rating4.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUFA76413DK8T technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.1A |
| Current Rating | 4.8A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 56mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 27ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 49mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 60V |
| Weight | 0.2304g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA76413DK8T Datasheet
Download the complete datasheet for Onsemi HUFA76413DK8T to view detailed technical specifications.
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