N-Channel Logic Level Power MOSFET, TO-252AA package, featuring 60V drain-source breakdown voltage and 20A continuous drain current. Offers a maximum drain-source on-resistance of 27mΩ at 10Vgs. Designed for surface mounting with a maximum power dissipation of 110W and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 7.7ns and fall time of 56ns. Packaged on tape and reel for high-volume applications.
PackageTO-252AA
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Onsemi HUFA76429D3ST-F085 technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 27mR |
| Element Configuration | Single |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.48nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 7.7ns |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA76429D3ST-F085 Datasheet
Download the complete datasheet for Onsemi HUFA76429D3ST-F085 to view detailed technical specifications.
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