The HUFA76439S3ST is a high-power N-channel MOSFET from Onsemi, featuring a maximum operating temperature range of -55°C to 175°C. With a maximum power dissipation of 155W, this device is suitable for high-current applications. The TO-263-3 package is designed for surface mount applications, and the lead-free construction ensures compliance with RoHS regulations. The MOSFET has a maximum drain to source breakdown voltage of 60V and a maximum drain to source resistance of 10mR.
PackageTO-263-3
Current Rating71A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUFA76439S3ST technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 71A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 125ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.745nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 155W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 155W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 45ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA76439S3ST Datasheet
Download the complete datasheet for Onsemi HUFA76439S3ST to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.