N-channel MOSFET, 80V drain-source breakdown voltage, 2.3A continuous drain current, and 173mΩ drain-source resistance. Features 2 N-channel FETs in a surface-mount SOIC package, with a maximum power dissipation of 2.5W. Operates from -55°C to 150°C, with a 36ns fall time and 115ns turn-off delay. RoHS compliant and lead-free.
PackageSOIC
Current Rating2.3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi HUFA76504DK8T technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.3A |
| Current Rating | 2.3A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 173mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 36ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Series | UltraFET™ |
| Turn-Off Delay Time | 115ns |
| DC Rated Voltage | 80V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi HUFA76504DK8T Datasheet
Download the complete datasheet for Onsemi HUFA76504DK8T to view detailed technical specifications.
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