The IRF510A is a TO-220AB packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current of 5.6A and a drain to source breakdown voltage of 100V. The device features a drain to source resistance of 400mR and a power dissipation of 33W. The IRF510A is RoHS compliant and available in a rail or tube packaging format with 50 units per package.
PackageTO-220AB
PolarityN-CHANNEL
Power33W
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Technical Specifications
Onsemi IRF510A technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 400mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRF510A Datasheet
Download the complete datasheet for Onsemi IRF510A to view detailed technical specifications.
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