N-channel enhancement mode power MOSFET featuring 500V maximum drain-source voltage and 4.5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220 package with through-hole mounting. Key specifications include a maximum drain-source resistance of 1500 mOhm at 10V and a typical gate charge of 22 nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 75W.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Onsemi IRF830 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.54(Max) |
| Package Width (mm) | 4.57(Max) |
| Package Height (mm) | 9.27(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4.5A |
| Material | Si |
| Maximum Drain Source Resistance | 1500@10VmOhm |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Typical Gate Charge @ 10V | 22nC |
| Typical Input Capacitance @ Vds | 800(Max)@25VpF |
| Maximum Power Dissipation | 75000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi IRF830 Datasheet
Download the complete datasheet for Onsemi IRF830 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.