N-channel power MOSFET featuring 200V drain-source breakdown voltage and 9.8A continuous drain current. This logic-level MOSFET offers a low 180mΩ drain-source resistance (Rds On) and a maximum power dissipation of 40W. Packaged in a TO-220-3 through-hole mount, it operates from -55°C to 150°C and includes fast switching characteristics with a 11ns turn-on delay and 15ns fall time.
PackageTO-220-3
Current Rating9.8A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Onsemi IRLS640A technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9.8A |
| Current Rating | 9.8A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.705nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 200V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRLS640A Datasheet
Download the complete datasheet for Onsemi IRLS640A to view detailed technical specifications.
No datasheet is available for this part.
Product Images
