The IRLW610ATM is a TO-262-3 packaged N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.3A and a maximum power dissipation of 33W. The device is RoHS compliant and lead free. It features a drain to source breakdown voltage of 200V and a drain to source resistance of 1.5R.
PackageTO-262-3
Current Rating3.3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi IRLW610ATM technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.3A |
| Current Rating | 3.3A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 240pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Mount | Through Hole |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi IRLW610ATM Datasheet
Download the complete datasheet for Onsemi IRLW610ATM to view detailed technical specifications.
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