The ISL9N308AP3 is a TO-220AB packaged N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 75A and a drain to source breakdown voltage of 30V. The device has a drain to source resistance of 8mR and a power dissipation of 100W. It is RoHS compliant and available in a package quantity of 400 in a rail/Tube packaging.
PackageTO-220AB
PolarityN-CHANNEL
Power100W
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Technical Specifications
Onsemi ISL9N308AP3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 64ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi ISL9N308AP3 Datasheet
Download the complete datasheet for Onsemi ISL9N308AP3 to view detailed technical specifications.
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