
N-channel IGBT transistor, 430V collector-emitter breakdown voltage, 10A continuous collector current, and 1.9V collector-emitter voltage. Features a 130W power dissipation and operates within a -40°C to 175°C temperature range. Surface mountable in a TO-252AA (DPAK) package, this RoHS compliant component is supplied on a 2500-piece reel.
Onsemi ISL9V2040D3ST technical specifications.
| Package/Case | TO-252AA |
| Clamping Voltage | 400V |
| Collector Emitter Breakdown Voltage | 430V |
| Collector Emitter Voltage (VCEO) | 1.9V |
| Collector-emitter Voltage-Max | 1.9V |
| Current Rating | 10A |
| Height | 2.39mm |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 430V |
| Max Collector Current | 10A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | EcoSPARK™ |
| DC Rated Voltage | 400V |
| Weight | 0.26037g |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi ISL9V2040D3ST to view detailed technical specifications.
No datasheet is available for this part.
