N-Channel Insulated Gate Bipolar Transistor (IGBT) for ignition applications, featuring a 450V clamping voltage and 480V collector-emitter breakdown voltage. This surface-mount device offers a maximum collector current of 51A and a low collector-emitter voltage of 1.6V. Packaged in a TO-263AB (D2PAK) case, it operates across a wide temperature range from -40°C to 175°C and supports 300W power dissipation. The component is RoHS compliant and supplied on an 800-piece tape and reel.
PackageTO-263AB
MountingSurface Mount
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Technical Specifications
Onsemi ISL9V5045S3ST technical specifications.
General
| Package/Case | TO-263AB |
| Clamping Voltage | 450V |
| Collector Emitter Breakdown Voltage | 480V |
| Collector Emitter Voltage (VCEO) | 1.6V |
| Collector-emitter Voltage-Max | 1.6V |
| Height | 4.83mm |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Breakdown Voltage | 480V |
| Max Collector Current | 51A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | EcoSPARK® |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi ISL9V5045S3ST Datasheet
Download the complete datasheet for Onsemi ISL9V5045S3ST to view detailed technical specifications.
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