NPN bipolar junction transistor (BJT) for through-hole mounting. Features a maximum collector-emitter voltage of 50V and a continuous collector current of 10A. Offers a maximum power dissipation of 25000mW. Packaged in a TO-220F-3SG with 3 pins and a tab, this single-element silicon transistor operates from -55°C to 150°C.
PackageTO-220F-3SG
MountingThrough Hole
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Technical Specifications
Onsemi JANSL_2N3019 technical specifications.
General
| Package/Case | TO-220F-3SG |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 15.87 |
| Seated Plane Height (mm) | 19.1 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 50V |
| Maximum DC Collector Current | 10A |
| Maximum Power Dissipation | 25000mW |
| Material | Si |
| Minimum DC Current Gain | 200@270mA@2V |
| Maximum Transition Frequency | 330(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| Dose Level | 50 |
Datasheet
Onsemi JANSL_2N3019 Datasheet
Download the complete datasheet for Onsemi JANSL_2N3019 to view detailed technical specifications.
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