PNP Epitaxial Silicon Transistor, 6000-BLKBG, designed for through-hole mounting in a TO-226-3 package. Features a maximum collector current of 1A and a collector-emitter voltage of 160V. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 900mW. This lead-free, RoHS compliant component is supplied in bulk packaging.
Frequency50MHz
PackageTO-226-3
Current Rating-1A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSA1013OBU technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector Emitter Saturation Voltage | -1.5V |
| Collector Emitter Voltage (VCEO) | 160V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -160V |
| Weight | 0.185g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA1013OBU Datasheet
Download the complete datasheet for Onsemi KSA1013OBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.