PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 150mA and a collector-emitter voltage (VCEO) of 50V. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 80MHz. Operates within a temperature range of -65°C to 125°C with a maximum power dissipation of 400mW. This RoHS compliant component is lead-free and supplied in bulk packaging.
Frequency80MHz
PackageTO-92
Current Rating-150mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA1015OBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 80MHz |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA1015OBU Datasheet
Download the complete datasheet for Onsemi KSA1015OBU to view detailed technical specifications.
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