PNP Silicon Bipolar Junction Transistor in a TO-126 plastic package, featuring a 180V Collector Emitter Breakdown Voltage (VCEO) and a 100mA Max Collector Current. This through-hole mounted component offers a 180MHz transition frequency and a minimum hFE of 100. With a maximum power dissipation of 1.2W, it operates across a temperature range of -55°C to 150°C. The transistor is lead-free and RoHS compliant.
Onsemi KSA1142YSTU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 180V |
| Collector Emitter Saturation Voltage | -160mV |
| Collector Emitter Voltage (VCEO) | 180V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 180MHz |
| DC Rated Voltage | -180V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSA1142YSTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.