PNP Silicon Bipolar Junction Transistor (BJT) in a TO-126 through-hole package. Features a maximum collector-emitter voltage (VCEO) of 400V, a maximum collector current of 500mA, and a minimum hFE of 30. Offers a collector-emitter saturation voltage of -1V and a maximum power dissipation of 1W. Operates within a temperature range of -55°C to 150°C. Lead-free and RoHS compliant.
PackageTO-126
Current Rating-500mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi KSA1156YSTSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -400V |
| Weight | 0.758g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA1156YSTSTU Datasheet
Download the complete datasheet for Onsemi KSA1156YSTSTU to view detailed technical specifications.
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