PNP Bipolar Junction Transistor (BJT) in a TO-126 package. Features a collector-emitter breakdown voltage of 120V, a continuous collector current rating of 1.2A, and a maximum power dissipation of 1.2W. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 175MHz. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency175MHz
PackageTO-126
Current Rating-1.2A
MountingThrough Hole
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Technical Specifications
Onsemi KSA1220YSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -1.2A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 175MHz |
| Gain Bandwidth Product | 175MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 1.2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.2W |
| RoHS Compliant | Yes |
| Transition Frequency | 175MHz |
| DC Rated Voltage | -120V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA1220YSTU Datasheet
Download the complete datasheet for Onsemi KSA1220YSTU to view detailed technical specifications.
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