
PNP Bipolar Junction Transistor (BJT) in TO-251-3 package. Features a 50V collector-emitter voltage (VCEO) and a 2A maximum collector current. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with 1W power dissipation. Lead-free and RoHS compliant.
Onsemi KSA1241YTU technical specifications.
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | -55V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5040 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Series | KSA1241 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSA1241YTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
