PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 5A and a collector-emitter breakdown voltage of 20V. Features a transition frequency of 180MHz, a minimum hFE of 100, and a maximum power dissipation of 10W. Packaged in TO-251-3 for through-hole mounting, this RoHS compliant component operates across a wide temperature range of -55°C to 150°C.
Frequency180MHz
PackageTO-251-3
Current Rating-5A
MountingThrough Hole
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Technical Specifications
Onsemi KSA1242YTU technical specifications.
General
| Package/Case | TO-251-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -8V |
| Frequency | 180MHz |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 5040 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 10W |
| RoHS Compliant | Yes |
| Series | KSA1242 |
| Transition Frequency | 180MHz |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA1242YTU Datasheet
Download the complete datasheet for Onsemi KSA1242YTU to view detailed technical specifications.
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