PNP Bipolar Junction Transistor (BJT) in a TO-126 package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 200V. Offers a transition frequency of 400MHz and a minimum hFE of 40. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.2W. This through-hole mount component is lead-free and RoHS compliant.
Onsemi KSA1406CSTU technical specifications.
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 400MHz |
| Gain Bandwidth Product | 400MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1920 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.2W |
| RoHS Compliant | Yes |
| Series | KSA1406 |
| Transition Frequency | 400MHz |
| DC Rated Voltage | -200V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSA1406CSTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.