PNP Epitaxial Silicon Transistor, TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 3A and a collector-emitter voltage of 30V. Offers a DC rated voltage of -30V and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 10W. This RoHS compliant component is supplied in a rail/tube package.
Frequency100MHz
PackageTO-220-3
Current Rating-3A
MountingThrough Hole
Quick Jump:
Technical Specifications
Onsemi KSA473YTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 9.4mm |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 3A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 10W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| Weight | 1.8g |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA473YTU Datasheet
Download the complete datasheet for Onsemi KSA473YTU to view detailed technical specifications.
No datasheet is available for this part.
Product Images
