PNP Epitaxial Silicon Transistor, TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 3A and a collector-emitter voltage (VCEO) of 55V. Offers a minimum DC current gain (hFE) of 40 and a low collector-emitter saturation voltage of -150mV. Operates within a temperature range of -55°C to 150°C with a power dissipation of 25W. This RoHS compliant component is supplied in a tube of 50 units.
PackageTO-220-3
Current Rating-3A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi KSA614YTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 55V |
| Collector Emitter Saturation Voltage | -150mV |
| Collector Emitter Voltage (VCEO) | 55V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -55V |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA614YTU Datasheet
Download the complete datasheet for Onsemi KSA614YTU to view detailed technical specifications.
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