PNP Bipolar Junction Transistor (BJT) in a TO-92 package for through-hole mounting. Features a collector-emitter voltage (VCEO) of 25V, maximum collector current of 300mA, and a minimum hFE of 70. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 400mW. This RoHS compliant component is lead-free and supplied in bulk packaging.
PackageTO-92
Current Rating-300mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi KSA642GBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -350mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -300mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 400mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSA642 |
| DC Rated Voltage | -25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA642GBU Datasheet
Download the complete datasheet for Onsemi KSA642GBU to view detailed technical specifications.
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