PNP Epitaxial Silicon Transistor, 2000-FNFLD, featuring a -80V Collector Base Voltage (VCBO) and 60V Collector Emitter Voltage (VCEO). This through-hole mounted component offers a maximum collector current of -700mA and a minimum hFE of 40. With a transition frequency of 50MHz and a maximum power dissipation of 800mW, it operates within a temperature range of -55°C to 150°C. Packaged in an Ammo Pack, this RoHS compliant transistor is housed in a TO-92-3 package.
Frequency50MHz
PackageTO-92-3
Current Rating-700mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA708CYTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | -700mA |
| Emitter Base Voltage (VEBO) | -8V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 700mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
| Weight | 0.24g |
| Width | 3.86mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA708CYTA Datasheet
Download the complete datasheet for Onsemi KSA708CYTA to view detailed technical specifications.
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