PNP Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 150V collector-emitter breakdown voltage and a 150V collector-emitter voltage (VCEO). Offers a maximum collector current of 700mA and a transition frequency of 50MHz. This through-hole mounted component has a minimum DC current gain (hFE) of 70 and a maximum power dissipation of 800mW. RoHS compliant and lead-free.
Frequency50MHz
PackageTO-92-3
Current Rating-700mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA709GTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -700mA |
| Emitter Base Voltage (VEBO) | -8V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -150V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA709GTA Datasheet
Download the complete datasheet for Onsemi KSA709GTA to view detailed technical specifications.
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