PNP Epitaxial Silicon Transistor, TO-92 package, featuring a collector-emitter voltage of 50V and a maximum collector current of 150mA. This bipolar junction transistor offers a transition frequency of 180MHz and a minimum hFE of 40. With a maximum power dissipation of 250mW, it operates across a temperature range of -55°C to 150°C. The component is RoHS compliant and designed for through-hole mounting.
Frequency180MHz
PackageTO-92
Current Rating-150mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA733GBU technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-180mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
-150mA
Emitter Base Voltage (VEBO)
-5V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
4.58mm
hFE Min
40
Lead Free
Lead Free
Length
4.58mm
Max Collector Current
150mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Bulk
Polarity
PNP
Power Dissipation
250mW
Radiation Hardening
No
RoHS Compliant
Yes
Series
KSA733
Transition Frequency
180MHz
DC Rated Voltage
-50V
Weight
0.179g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSA733GBU Datasheet
Download the complete datasheet for Onsemi KSA733GBU to view detailed technical specifications.
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