PNP Epitaxial Silicon Transistor for through-hole mounting in a TO-92-3 package. Features a collector-emitter breakdown voltage of 50V, a maximum collector current of 150mA, and a transition frequency of 180MHz. Offers a minimum DC current gain (hFE) of 40 and a collector-emitter saturation voltage of -180mV. Operates within a temperature range of -55°C to 150°C with a power dissipation of 250mW. RoHS compliant and lead-free.
Frequency180MHz
PackageTO-92-3
Current Rating-150mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA733GTA technical specifications.
General
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
-180mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
-150mA
Emitter Base Voltage (VEBO)
-5V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
4.58mm
hFE Min
40
Lead Free
Lead Free
Length
4.58mm
Max Breakdown Voltage
50V
Max Collector Current
150mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
250mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
180MHz
DC Rated Voltage
-50V
Weight
0.24g
Width
3.86mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSA733GTA Datasheet
Download the complete datasheet for Onsemi KSA733GTA to view detailed technical specifications.
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