PNP Bipolar Junction Transistor (BJT) in a TO-226-3 (TO-92L) package. Features a collector-emitter voltage of 120V, a maximum collector current of 800mA, and a transition frequency of 120MHz. Offers a minimum DC current gain (hFE) of 60 and a maximum power dissipation of 900mW. Designed for through-hole mounting, this lead-free and RoHS compliant component operates across a temperature range of -55°C to 150°C.
Frequency120MHz
PackageTO-226-3
Current Rating-800mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA916YBU technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 900mW |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -120V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA916YBU Datasheet
Download the complete datasheet for Onsemi KSA916YBU to view detailed technical specifications.
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