PNP Epitaxial Silicon Transistor, TO-92 package, featuring a maximum collector-emitter voltage (VCEO) of 120V and a continuous collector current (IC) of -800mA. This bipolar junction transistor offers a minimum DC current gain (hFE) of 80 and a transition frequency (fT) of 120MHz. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 900mW. The component is RoHS compliant and supplied in an ammo pack.
Frequency120MHz
PackageTO-92
Current Rating-800mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA916YTA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| Height | 8mm |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 800mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -120V |
| Weight | 0.3711027g |
| Width | 3.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA916YTA Datasheet
Download the complete datasheet for Onsemi KSA916YTA to view detailed technical specifications.
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