PNP Epitaxial Silicon Transistor, TO-92 package, featuring a maximum collector-emitter voltage (VCEO) of 120V and a continuous collector current (IC) of -800mA. This bipolar junction transistor offers a minimum DC current gain (hFE) of 80 and a transition frequency (fT) of 120MHz. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 900mW. The component is RoHS compliant and supplied in an ammo pack.
Frequency120MHz
PackageTO-92
Current Rating-800mA
MountingThrough Hole
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Technical Specifications
Onsemi KSA916YTA technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-120V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
-1V
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
1V
Current Rating
-800mA
Emitter Base Voltage (VEBO)
-5V
Frequency
120MHz
Gain Bandwidth Product
120MHz
Height
8mm
hFE Min
80
Lead Free
Lead Free
Length
4.9mm
Max Breakdown Voltage
120V
Max Collector Current
800mA
Max Frequency
1MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Ammo Pack
Polarity
PNP
Power Dissipation
900mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
120MHz
DC Rated Voltage
-120V
Weight
0.3711027g
Width
3.9mm
Compliance
RoHS
Compliant
Datasheet
Onsemi KSA916YTA Datasheet
Download the complete datasheet for Onsemi KSA916YTA to view detailed technical specifications.
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