PNP Bipolar Junction Transistor (BJT) in a TO-220 package, featuring a 150V collector-emitter voltage (VCEO) and a maximum collector current of 1.5A. This through-hole mounted component offers a minimum DC current gain (hFE) of 40 and a transition frequency of 4MHz. Designed for operation between -55°C and 150°C, it has a power dissipation of 1.5W and is RoHS compliant.
Frequency4MHz
PackageTO-220-3
Current Rating-1.5A
MountingThrough Hole
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Technical Specifications
Onsemi KSA940H1TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -1.5V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -1.5A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 1.5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | -150V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSA940H1TU Datasheet
Download the complete datasheet for Onsemi KSA940H1TU to view detailed technical specifications.
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