
PNP Epitaxial Silicon Transistor designed for through-hole mounting in a TO-220 package. Features a maximum collector current of 1.5A and a collector-emitter voltage of -150V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 4MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 25W. Supplied in a 50-piece rail/tube package.
Onsemi KSA940TU technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | -150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -1.5V |
| Collector Emitter Voltage (VCEO) | -150V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 4MHz |
| Height | 9.2mm |
| hFE Min | 40 |
| Length | 9.9mm |
| Max Collector Current | 1.5A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | KSA940 |
| Transition Frequency | 4MHz |
| DC Rated Voltage | -150V |
| Weight | 1.8g |
| Width | 4.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSA940TU to view detailed technical specifications.
No datasheet is available for this part.
