
PNP bipolar junction transistor in a TO-92 package. Features a 120V collector-emitter breakdown voltage and a maximum collector current of 50mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 500mW. Through-hole mounting and bulk packaging.
Onsemi KSA992PBU technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | -90mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -50mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -120V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSA992PBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
