PNP bipolar junction transistor (BJT) designed for general-purpose applications. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. Offers a typical DC current gain (hFE) of 60 and a transition frequency of 9MHz. Packaged in a TO-220-3 through-hole mount configuration with a power dissipation of 25W. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Frequency9MHz
PackageTO-220-3
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Onsemi KSB1015OTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 9MHz |
| Gain Bandwidth Product | 9MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSB1015 |
| Transition Frequency | 9MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB1015OTU Datasheet
Download the complete datasheet for Onsemi KSB1015OTU to view detailed technical specifications.
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