PNP Epitaxial Silicon Transistor designed for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 4A and a collector-emitter voltage (VCEO) of 80V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 9MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 25W. This RoHS compliant component is supplied in a tube.
Frequency9MHz
PackageTO-220-3
Current Rating-4A
MountingThrough Hole
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Technical Specifications
Onsemi KSB1017YTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.7V |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 9MHz |
| Gain Bandwidth Product | 9MHz |
| Height | 15.87mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Collector Current | 4A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSB1017 |
| Transition Frequency | 9MHz |
| DC Rated Voltage | -80V |
| Weight | 2.27g |
| Width | 2.54mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB1017YTU Datasheet
Download the complete datasheet for Onsemi KSB1017YTU to view detailed technical specifications.
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