PNP Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-226-3 package. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 135 and a transition frequency of 120MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 750mW. This RoHS compliant component is lead-free and supplied in bulk packaging.
PackageTO-226-3
Current Rating-1A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi KSB1116AGBU technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 135 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Package Quantity | 10000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSB1116 |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -60V |
| Weight | 0.1782g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB1116AGBU Datasheet
Download the complete datasheet for Onsemi KSB1116AGBU to view detailed technical specifications.
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