PNP Bipolar Junction Transistor (BJT) in TO-92 package. Features a 50V Collector-Emitter Voltage (VCEO) and a maximum collector current of 1A. Offers a minimum DC current gain (hFE) of 135 and a transition frequency of 120MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 750mW. Designed for through-hole mounting and supplied in an ammo pack.
Frequency120MHz
PackageTO-92-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi KSB1116SYTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 135 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 750mW |
| RoHS Compliant | Yes |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -50V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB1116SYTA Datasheet
Download the complete datasheet for Onsemi KSB1116SYTA to view detailed technical specifications.
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