PNP Bipolar Junction Transistor (BJT) in TO-92 package, featuring a 50V collector-emitter voltage (VCEO) and a maximum collector current of 1A. This through-hole component offers a transition frequency of 120MHz and a minimum hFE of 135. Operating across a wide temperature range from -55°C to 150°C, it has a power dissipation of 750mW and is RoHS compliant.
Frequency120MHz
PackageTO-92-3
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi KSB1116YTA technical specifications.
General
| Package/Case | TO-92-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 120MHz |
| Gain Bandwidth Product | 120MHz |
| hFE Min | 135 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 750mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 750mW |
| RoHS Compliant | Yes |
| Series | KSB1116 |
| Transition Frequency | 120MHz |
| DC Rated Voltage | -50V |
| Weight | 0.24g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB1116YTA Datasheet
Download the complete datasheet for Onsemi KSB1116YTA to view detailed technical specifications.
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