PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 25V collector-emitter breakdown voltage and a 2A maximum collector current. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 150MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.3W. Packaged in SOT-89, this lead-free and RoHS compliant component is supplied on tape and reel.
Onsemi KSB1121TTF technical specifications.
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -350mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 600mV |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 500mW |
| RoHS Compliant | Yes |
| Series | KSB1121 |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -25V |
| Weight | 0.1305g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi KSB1121TTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
