PNP Epitaxial Silicon Transistor in TO-126 package, designed for through-hole mounting. Features a maximum collector current of 5A and a collector-emitter voltage of 60V. Offers a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 1.3W. Operates across a wide temperature range from -55°C to 150°C. This component is lead-free and RoHS compliant.
PackageTO-126
Current Rating-5A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi KSB1151YSTU technical specifications.
General
| Package/Case | TO-126 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -140mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 60 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSB1151 |
| DC Rated Voltage | -60V |
| Weight | 0.761g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB1151YSTU Datasheet
Download the complete datasheet for Onsemi KSB1151YSTU to view detailed technical specifications.
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