PNP Bipolar Junction Transistor (BJT) in a TO-220-3 through-hole package. Features a maximum collector current of 3A and collector-emitter voltage of 60V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 9MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W.
Frequency9MHz
PackageTO-220-3
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Onsemi KSB1366G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -7V |
| Frequency | 9MHz |
| Gain Bandwidth Product | 9MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Transition Frequency | 9MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB1366G Datasheet
Download the complete datasheet for Onsemi KSB1366G to view detailed technical specifications.
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