PNP Power Bipolar Junction Transistor (BJT) in a TO-220-3 package, designed for through-hole mounting. Features a maximum collector current of 2A and a collector-emitter breakdown voltage of 150V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 5MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 25W.
Frequency5MHz
PackageTO-220-3
Current Rating-2A
MountingThrough Hole
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Technical Specifications
Onsemi KSB546Y technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 150V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 5MHz |
| Gain Bandwidth Product | 5MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 200 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 25W |
| Series | KSB546 |
| Transition Frequency | 5MHz |
| DC Rated Voltage | -150V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi KSB546Y Datasheet
Download the complete datasheet for Onsemi KSB546Y to view detailed technical specifications.
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