PNP Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector current of 1A and a collector-emitter voltage (VCEO) of 25V. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 110MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 800mW. This RoHS compliant component is lead-free and supplied in bulk packaging.
Frequency110MHz
PackageTO-92
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Onsemi KSB564AGBU technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 110MHz |
| Gain Bandwidth Product | 110MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 800mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB564AGBU Datasheet
Download the complete datasheet for Onsemi KSB564AGBU to view detailed technical specifications.
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