PNP Silicon Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage (VCEO) of 80V. Offers a minimum DC current gain (hFE) of 40 and a transition frequency of 3MHz. Maximum power dissipation is 30W, with an operating temperature range from -55°C to 150°C. RoHS compliant.
Frequency3MHz
PackageTO-220-3
MountingThrough Hole
PolarityPNP
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Technical Specifications
Onsemi KSB596OTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.7V |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 3MHz |
| Gain Bandwidth Product | 3MHz |
| hFE Min | 40 |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | KSB596 |
| Transition Frequency | 3MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi KSB596OTU Datasheet
Download the complete datasheet for Onsemi KSB596OTU to view detailed technical specifications.
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